收藏本站
Typical Characteristics T J = 25 °C unless otherwise noted
150
4
120
V GS = 10 V
V GS = 8 V
V GS = 6 V
V GS = 4.5 V
3
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 3.5 V
90
60
30
V GS = 4 V
V GS = 3.5 V
PULSE DURATION = 80 μ s
2
1
V GS = 4 V
V GS = 8 V
V GS = 4.5 V
V GS = 6 V
V GS = 10 V
DUTY CYCLE = 0.5% MAX
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
30
60
90
120
150
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.8
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
20
1.6
1.4
1.2
I D = 20 A
V GS = 10 V
15
10
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
I D = 20 A
T J = 150 o C
1.0
5
0.8
T J = 25 o C
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
150
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
200
100
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
120
90
V DS = 3 V
10
V GS = 0 V
T J = 175 o C
60
T J = 175 o C
1
T J = 25 o C
T J = -55 o C
30
0
T J = 25 o C
T J = -55 o C
0.1
0
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
3
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDD6N20TM MOSFET N-CH 200V 4.5A DPAK
FDD6N25TF MOSFET N-CH 250V 4.4A DPAK
FDD6N50FTF MOSFET N-CH 500V 5.5A DPAK
FDD6N50TM MOSFET N-CH 500V 6A DPAK
FDD7N20TM MOSFET N-CH 200V 5A D-PAK
FDD7N60NZTM MOSFET N-CH 600V 5.5A DPAK-3
FDD8424H_F085 MOSFET N/P-CH DUAL 40V DPAK-4
FDD8424H MOSFET DUAL N/P-CH 40V TO252-4L
相关代理商/技术参数
FDD6N20 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET
FDD6N20TF 功能描述:MOSFET 200V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N20TM 功能描述:MOSFET 200V N Chanel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N25 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
FDD6N25TF 功能描述:MOSFET 250V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N25TM 功能描述:MOSFET 250V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N50 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDD6N50F 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5.5A, 1.15ヘ